Semiconductor laser device
文献类型：专利
| 作者 | UOMI, KAZUHISA; OHTOSHI, TSUKURU; TSUCHIYA, TOMONOBU; SASAKI, SHINJI; CHINONE, NAOKI |
| 发表日期 | 1991-12-17 |
| 专利号 | US5073892 |
| 著作权人 | OPNEXT JAPAN, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device of the field modulation type includes a structure in which the threshold carrier density for laser oscillation is reduced so as to enable an effective action of a modulated electric field applied externally on an active region for radiating light, thereby enabling an extremely high speed modulation. A quantum structure which does not fulfill the charge neutrality condition for free-carriers or a strained super lattice structure is adopted as the structure in which the threshold carrier density is reduced. |
| 公开日期 | 1991-12-17 |
| 申请日期 | 1990-06-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87102]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OPNEXT JAPAN, INC. |
| 推荐引用方式 GB/T 7714 | UOMI, KAZUHISA,OHTOSHI, TSUKURU,TSUCHIYA, TOMONOBU,et al. Semiconductor laser device. US5073892. 1991-12-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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