Microscopic groove forming method
文献类型：专利
| 作者 | TAKEUCHI YOSHINORI; IDOTA TAKESHI |
| 发表日期 | 1988-10-31 |
| 专利号 | JP1988263726A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Microscopic groove forming method |
| 英文摘要 | PURPOSE:To make it possible to form a narrow-widthed microscopic groove easily in an excellent reproducible manner by a method wherein a reactive ion-etching is conducted under suitable conditions. CONSTITUTION:Several layers of InP layers 2-4 and an InGaAsP layer 1, to be grown as the uppermost layer, are epitaxially grown on an InP substrate 5 successively, and after a photoresist 6 has been spread on the InGaAsP layer, a stripe-shaped aperture part is provided using a photolithographic method. A stripe-like aperture is provided on the InGaAsP layer 1 by performing reactive ionetching using the etching gas which is formed by mixing Ar and CCl4 at the ratio of 3:2-50:1 using the above-mentioned aperture as a mask, and besides, using the above-mentioned aperture as a mask, a deep groove is formed on the InP layer by conducting wet etching using HCl as an etchant. As a result, the shape of the end face of the groove can be determined by the ratio of the etching rate of the mask and the layer to be etched, and by the shape of the side wall of the aperture of the mask, and the narrow-widthed microscopic groove can be formed in a stable and excellent reproducible manner. |
| 公开日期 | 1988-10-31 |
| 申请日期 | 1987-04-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87104]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKEUCHI YOSHINORI,IDOTA TAKESHI. Microscopic groove forming method. JP1988263726A. 1988-10-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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