Semiconductor laser and drive thereof
文献类型：专利
| 作者 | ONO YUZO |
| 发表日期 | 1986-11-25 |
| 专利号 | JP1986265885A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and drive thereof |
| 英文摘要 | PURPOSE:To stabilize the oscillation wavelength of a semiconductor laser and to miniaturize the light source thereof by a method wherein the semiconductor laser is provided with a first electrode, which feeds driving current to the light-emitting part, a second electrode, which is adjacent to the light-emitting part independent of the first electrode and feeds current to enable heat to generate in the P-N junction part, and a third electrode, which leads out the junction voltage of the P-N junction part. CONSTITUTION:An exothermic part electrode 10 and a derecting part electrode 11 are both coupled thermally with a light-emitting part 9. When the exothermic part electrode 10 is conducted, heat is generated in the P-N junction (constituted of a clad layer 5 and an active layer 4) under the electrodes and the exothermic part electrode 10 acts as a heater for the light-emitting part 9, while the detecting part electrode 11 acts as a temperature sensor, which catches a temperature change in the P-N junction under the electrodes as a change in the terminal voltage, by passing low current of several mA or thereabouts thereto. As the width of a chip for a normal semiconductor laser is 100-300mum, the exothermic part electrode 10 and the detecting part electrode 11 can be made adjacent to the light-emitting part 9 50-100mum away. As a result, the thermal coupling thereof with the light-emitting part 9 is also good and the thermal time constants thereof can be also lessened. |
| 公开日期 | 1986-11-25 |
| 申请日期 | 1985-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87105]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | ONO YUZO. Semiconductor laser and drive thereof. JP1986265885A. 1986-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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