Semiconductor laser device
文献类型：专利
| 作者 | NAKATSUKA SHINICHI; ONO YUUICHI; KAJIMURA TAKASHI |
| 发表日期 | 1985-06-21 |
| 专利号 | JP1985115283A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent minority carriers in an absorbing layer from decreasing the current constriction effect or instabilizing the transverse mode with the increase of light outputs in a laser of waveguide type operating with complex refractive index difference, by providing the laser with a current-blocking layer between the light-absorbing layer and a clade layer. CONSTITUTION:An N-GaAs substrate 1 is provided thereon with an N type Ga0.55Al0.45As clad layer 2, an undoped Ga0.86Al0.14As current-blocking layer 3, a P type Ga0.55Al0.45As clad layer 4, an N type Ga0.55Al0.45As current-blocking layer 5 and an N type GaAs light-absorbing layer 6, which are caused to grow on the substrate 1 successively in that order, and are etched away up to the current-blocking layer 5 to shape a 3.5-10mum wide stripe. A P type Ga0.55 Al0.45As layer 7 and a P type GaAs cap layer 8 are then caused to grow thereon. Minority carriers produced by light absorption of the light-absorbing layer 6 are inhibited from diffusing toward the active layer 3 by the current-blocking layer 5, so that those minority carriers produced in the light-absorbing layer will not decrease the current constriction effect. |
| 公开日期 | 1985-06-21 |
| 申请日期 | 1983-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87107]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | NAKATSUKA SHINICHI,ONO YUUICHI,KAJIMURA TAKASHI. Semiconductor laser device. JP1985115283A. 1985-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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