Semiconductor laser
文献类型：专利
| 作者 | TAKANO SHINJI |
| 发表日期 | 1991-10-08 |
| 专利号 | JP1991227089A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable a semiconductor laser to output a high power by a method wherein a semiconductor layer low in impurity concentration is formed between a P-type semiconductor layer and an active layer. CONSTITUTION:A P-InP buffer layer 20, an N-InP layer 30, and a P-InP layer 40 are successively grown on a P-InP substrate 10, and a U-shaped groove is formed by the use of a mixed etching solution of hydrochloric acid phosphoric acid. Then, a P-InP clad layer 50, a low impurity concentration InGaAsP layer 55, an undoped InGaAsP active layer 60, an N-InP layer 70, and an N-InGaAsP contact layer 80 are formed in a second growth process. By this setup, a semi conductor laser can be improved in output power and operation efficiency by preventing P-type impurity from diffusing into an active layer. |
| 公开日期 | 1991-10-08 |
| 申请日期 | 1990-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87108]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | TAKANO SHINJI. Semiconductor laser. JP1991227089A. 1991-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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