Semiconductor laser device
文献类型：专利
| 作者 | HASEGAWA MITSUTOSHI |
| 发表日期 | 1989-07-24 |
| 专利号 | JP1989184892A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To provide highly integrated semiconductor lasers, by forming semiconductor lasers so as to have different pitches at both ends and forming electrodes having a wire bonding pad between waveguides. CONSTITUTION:The opposite ends of semiconductor lasers 11-14 are arranged at different pitches. The lasers 11-14 have current injected regions, namely light-emitting regions 11a-14a. Electrodes 11d-14d having a wire bonding pad are formed and resonance surfaces 16, 17 are formed by cleavage. Thus, monolithic array lasers having small pitches can be driven individually in an effective manner, and highly integrated monolithic array lasers can be obtained. |
| 公开日期 | 1989-07-24 |
| 申请日期 | 1988-01-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87111]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | HASEGAWA MITSUTOSHI. Semiconductor laser device. JP1989184892A. 1989-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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