Photo-semiconductor element
文献类型：专利
| 作者 | SUZAKI SHINZO |
| 发表日期 | 1989-11-29 |
| 专利号 | JP1989295471A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photo-semiconductor element |
| 英文摘要 | PURPOSE:To increase light output, by a method wherein a first light guide layer, a depletion layer and an active light guide layer, whose refractive indexes are different, are laminated in order on a upper surface of a semiconductor substrate on which a diffraction grating is formed, and, after a part of depletion layer and a part of the active light guide layer are eliminated, a second light guide layer and a clad layer are laminated in order on the upper surface of a wafer. CONSTITUTION:On a semiconductor substrate 10, on which a diffraction grating is formed, the following are laminated in order; a first light guide layer 12, a depletion layer 13 whose refractive index is smaller than that of the layer 12, and an active light guide layer 14 whose refractive index is larger than that of the layer 12. After a part of the depletion layer 13 and a part of the active light guide layer 14 are eliminated, the following are laminated in order, on the whole part of the upper surface of a wafer; a second light guide layer 15 having the same composition as the first light guide layer 12, and a clad layer 16 having the same refractive index as the semiconductor substrate 10. Thereby, unevenness of the diffraction grating does not vanish in high temperature standby state, thereby high output can be obtained. |
| 公开日期 | 1989-11-29 |
| 申请日期 | 1988-05-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87113]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | SUZAKI SHINZO. Photo-semiconductor element. JP1989295471A. 1989-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。