Assembling method for semiconductor light emitting device
文献类型:专利
| 作者 | KIMURA SOICHI; TSUJII HIRAAKI |
| 发表日期 | 1987-01-21 |
| 专利号 | JP1987013089A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Assembling method for semiconductor light emitting device |
| 英文摘要 | PURPOSE:To eliminate the introduction of a crystal defect on an element in a wire bonding step by wire bonding the element not directly, but a metal film on an insulating film, thereby eliminating a load on the element at all. CONSTITUTION:A Pb/Sn solder layer 6 is formed on the upper surface of a silicon wafer 7, a scribing line 8 is formed, the layer 6 is melted by heating, and a laser chip 2 is die bonded to every submount A photosensitive resin film 3 is coated on the wafer 7, and resin films on a scribing line 8 and the chip 2 are selectively removed. A metal film 4 is deposited on the submount 1 of a region where the line 8 is removed, and the wafer 7 is divided along the line 8. The divided submounts are die bonded to a package 9, and wire bonded to the film 4 on the film 3. |
| 公开日期 | 1987-01-21 |
| 申请日期 | 1985-07-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87117] ![]() |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KIMURA SOICHI,TSUJII HIRAAKI. Assembling method for semiconductor light emitting device. JP1987013089A. 1987-01-21. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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