Semiconductor laser device
文献类型：专利
| 作者 | KAYANE NAOKI; SAITO KAZUTOSHI; SHIGE NORIYUKI; ITO RYOICHI |
| 发表日期 | 1988-04-30 |
| 专利号 | JP1988099592A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To hold temperature characteristics at threshold current density very stable and to increase optical output, by constructing a semiconductor laser device such that it has at least a first clad layer, an optical guide layer, an active layer and a second clad layer deposited in that order on a semiconductor substrate and that refractive indices of the respective layers satisfy a specific relation. CONSTITUTION:On a GaAs substrate 10, there are provided an N-type Ga1-xAlxAs (0.2n1, n4 respectively. A refractive index n2 of the optical guide layer 2 is determined so as to be n3>n2>n1, n4. Further, the refractive indices n1, n2, n3, n4 and n5 of the respective layers are determined so as to satisfy the formulas as shown. |
| 公开日期 | 1988-04-30 |
| 申请日期 | 1987-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87120]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KAYANE NAOKI,SAITO KAZUTOSHI,SHIGE NORIYUKI,et al. Semiconductor laser device. JP1988099592A. 1988-04-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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