Semiconductor device
文献类型：专利
| 作者 | YOKOGAWA TOSHIYA; OGURA MOTOTSUGU |
| 发表日期 | 1988-05-30 |
| 专利号 | JP1988126288A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To form a single crystal epitaxial film of high quality on an Si substrate, by forming a distorted superlattice layer composed of two or more kinds of II-VI compound semiconductor on a semiconductor substrate having a part covered with an insulative film and an exposed part. CONSTITUTION:An SiO2 thermal oxidation film 2 is formed on an Si substrate 1 by thermal oxidation method, and a striped pattern is formed by a photoetching method. Sequential epitaxial growth is performed by MOVPE method under the following conditions: substrate temperature 400 deg.C, flow rate of H2 of DMZ=2.5cc/min, flow rate of H of DMS=9cc/min, tatal flow rate=4 l/min, and reduced pressure 100 torr. A distorted superlattice layer 3 of ZnS and ZnS0.9Se0.1 are stacked on the substrate 1, and thereon the following are stacked in order: a clad layer 4 of a ZnS single crystal thin film, a light guide layer 5 of ZnS0.5Se0.5 single crystal thin film, and the clad layer 4 of ZnS single crystal thin film. |
| 公开日期 | 1988-05-30 |
| 申请日期 | 1986-11-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87123]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YOKOGAWA TOSHIYA,OGURA MOTOTSUGU. Semiconductor device. JP1988126288A. 1988-05-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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