Manufacture of semiconductor laser
文献类型：专利
| 作者 | KAWAMA YOSHITATSU |
| 发表日期 | 1990-12-13 |
| 专利号 | JP1990301180A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which can stably realize the width of an active region by implanting ions through the first mask so as to form a high resistance region which reaches the first conductivity type clad layer, and further implanting ion obliquely so as to form the second conductivity type region which contacts with the second conductivity type clad layer. CONSTITUTION:A P-type clad layer 2, an active layer 3 in MQW structure, and an n-type clad layer 4 are formed in order on a substrate Next, the first mask 5 in stripe shape is formed, and a high resistance region 6 is formed by implantation of high resistance impurity ions 6 reaching the P-type clad layer 2. At this time, the width of the active region 14 is controlled by the width of the first mask 5. Furthermore, n-type impurity ions 17 are implanted so that they may not reach the active layer 3 in MQW structure and may contact with the n-type clad layer 4 on it, whereby n-type regions 7 and 8 are formed. Next, the second mask 9 is formed from the n-type region 7 contacting with the n-type clad layer 4 until it exceeds the first mask 5, and through that mask 9 P-type impurity ion 18 implantation reaching the P-type clad layer 2 is done so as to form a P-type region 10. |
| 公开日期 | 1990-12-13 |
| 申请日期 | 1989-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87127]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAWAMA YOSHITATSU. Manufacture of semiconductor laser. JP1990301180A. 1990-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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