Formation of electrode for gaalas crystal
文献类型：专利
| 作者 | NIINA TATSUHIKO; YOSHITOSHI KEIICHI |
| 发表日期 | 1985-09-13 |
| 专利号 | JP1985180116A |
| 著作权人 | SANYO ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of electrode for gaalas crystal |
| 英文摘要 | PURPOSE:To form an electrode which is capable of establishing ohmic contact with the P type GaAlAS single crystal with carrier concentration of 1X10/cm or less by forming an Zn layer on the GaAlAS crystal by the molecular beam epitaxial growth method and placing it to the heat processing. CONSTITUTION:A Zn layer 2 is formed on the GaAlAS crystal 1 by the molecular beam epitaxial growth method and it is then subjected to the heat processing. for example, when the P type Ga0.6Al0.4AS single crystal base material 1 with the carrier concentration of about 1X10/cm is held at 100-200 deg.C within the MBE apparatus exhausted to the background vacuum degree of 1X10Torr or less and a cell accommodating Zn in the purity as high as 99.9999 is held at 300 deg.C, the Zn layer 2 grows at a rate of 1mum/hr. The base material 1 having the Zn layer 2 thus formed is held for 3min at a temperature as high as 420-450 deg.C for heat processing. |
| 公开日期 | 1985-09-13 |
| 申请日期 | 1984-02-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87128]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | NIINA TATSUHIKO,YOSHITOSHI KEIICHI. Formation of electrode for gaalas crystal. JP1985180116A. 1985-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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