Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | KIDOGUCHI ISAO; KAMIYAMA SATOSHI; ONAKA SEIJI |
| 发表日期 | 1991-09-12 |
| 专利号 | JP1991209892A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To lessen a semiconductor laser in series resistance and heat release value so as to improve it in reliability by a method wherein impurity is injected into regions on both the sides of a light emitting region so as to make them reverse in a conductivity type and serve as the regions of the opposite conductivity type. CONSTITUTION:A stripe-like light emitting region 31 large enough in width to enable a basic lateral mode oscillation to start is secured in one conductivity type active layer 4, both the sides of the light emitting region 31 are inverted in conductivity type to be an opposite conductivity type region 13. Therefore, an effective refractive index difference in a horizontal direction is provided between the one conductivity type light emitting region 31 and the opposite conductivity type regions on both the sides of the region to enable light to be trapped in the light emitting region, a current injected from a clad layer 12 above the active layer 4 can be converged into the light emitting region in the active layer. By this setup, a current injection region can be made large in a clad layer above an active layer, and an element can be decreased in series resistance, restrained from releasing heat at light emission through laser oscillation, and improved in reliability. |
| 公开日期 | 1991-09-12 |
| 申请日期 | 1990-01-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87132]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KIDOGUCHI ISAO,KAMIYAMA SATOSHI,ONAKA SEIJI. Semiconductor laser and manufacture thereof. JP1991209892A. 1991-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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