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文献类型：专利
| 作者 | FUJII TOSHIO |
| 发表日期 | 1989-09-04 |
| 专利号 | JP1989041269B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To reduce an oscillating current threshold value, by constituting as a portion of the epitaxial layer existing between the active layer and the substrate, an epitaxial layer with a superlattice structure consisting of an element making up a laser structure and the same kind of an element. CONSTITUTION:A quantum well type laser device provides with an N type GaAs buffer layer 2, an N type AlGaAs clad layer 3, a graded composition layer 4, an active layer 5, a graded composition layer 6, P type AlGaAs clad layer 7 and a P type GaAs contact layer 8 sequentially on a GaAs substrate As a portion of the clad layer 3, a superlattice structure 9 of AlGaAs and GaAs is formed so that characteristics of the hetero-interface making up the active layer can be improved and the oscillating current threshold value can be reduced. |
| 公开日期 | 1989-09-04 |
| 申请日期 | 1984-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87135]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FUJII TOSHIO. -. JP1989041269B2. 1989-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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