Semiconductor laser device
文献类型：专利
| 作者 | KAWAI YOSHIO; HORIKAWA HIDEAKI; SANO KAZUYA; FURUKAWA RIYOUZOU |
| 发表日期 | 1985-04-10 |
| 专利号 | JP1985062173A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To form two strangulating layers minimizing threshold value current and making low voltage actuation feasible by a method wherein an InGaAsP/InP semiconductor laser device is produced by one time serial liquid epitaxial growth and the first current strangulating layer is provided between an active layer and substrate while the second current strangulating layer comprising a Zn diffused region is provided on the active layer. CONSTITUTION:A semiconductor laser layer 3 comprising layers 4-8 is formed on a P type InP substrate 1 by one time serial liquid epitaxial growth. At this time, the layer 4 provided on the surface 1a excluding a groove 2 provided on the central part of the substrate 1 are utilized as the first current strangulating layer and a ZnO film 11 with a window 11a corresponding to the groove is provided on the surface 8a of an N type InP second clad layer 8 on an active layer 7. Next the Zn in the film 11 may be solid-diffused in a lower clad layer 8 by heattreatment to utilize Zn diffused regions 12 as the second current strangulating layers located on the upper side of the active layer 7. |
| 公开日期 | 1985-04-10 |
| 申请日期 | 1983-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87141]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | KAWAI YOSHIO,HORIKAWA HIDEAKI,SANO KAZUYA,et al. Semiconductor laser device. JP1985062173A. 1985-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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