Semiconductor laser, its manufacture and optical communication system
文献类型：专利
| 作者 | UOMI KAZUHISA; KAYANE NAOKI; AOKI MASAHIRO |
| 发表日期 | 1991-11-15 |
| 专利号 | JP1991256386A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser, its manufacture and optical communication system |
| 英文摘要 | PURPOSE:To sharply reduce the parasitic capacitance of a semiconductor laser and to execute an ultrahigh-speed optical modulation operation by a method wherein a first electrode part is arranged and installed so as to correspond to a resonator structure, a second electrode part is connected to an external power supply, the second electrode part is connected electrically to the first electrode part and one pair of electrodes are arranged and installed on a semiconductor region. CONSTITUTION:For example, an n-InGaAsP light-guide layer 2, an InGaAsP active layer 3 and a p-InP clad layer 4 are grown sequentially on an n-InP substrate 1 where a diffraction grating has been formed. A mesa stripe in a reverse mesa shape is formed by using an SiO2 film as a mask; after that, a p-InP buried layer 5 and an n-InP buried layer 6 are buried and grown. An SiO2 film 7 is formed at the lower part of a pad electrode 8b; a p-electrode 8 is formed. The n-InP buried layer 6 and the p-InP buried layer 5 are etched and removed by using the p-electrode 8 as a mask. The n-InP buried layer 6 and the p-InP buried layer 5 under an aerial interconnection layer 5 are side-etched and removed. An n-electrode 9 is formed; after that, a resonator length is cleaved to 300mum. |
| 公开日期 | 1991-11-15 |
| 申请日期 | 1990-03-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87142]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | UOMI KAZUHISA,KAYANE NAOKI,AOKI MASAHIRO. Semiconductor laser, its manufacture and optical communication system. JP1991256386A. 1991-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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