Manufacture of compound semiconductor device
文献类型：专利
| 作者 | SHIBATA ATSUSHI; NAKAO ICHIROU |
| 发表日期 | 1984-12-14 |
| 专利号 | JP1984222936A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of compound semiconductor device |
| 英文摘要 | PURPOSE:To manufacture the stabilized semiconductor laser of uniform characteristics by a method wherein a selective etching is performed on the first compound semiconductor layer only using the first insulating film as a mask, and then another etching is performed on the second compound semiconductor layer using the second insulating film as a mask, thereby enabling to prevent the side etching of a cap layer. CONSTITUTION:An etching is selectively performed on a cap layer 105 using an insulating film 106 as a mask. Sulfuric acid is mainly used as an etchant. The first insulating film 106 is removed, and subsequently the second insulating film 107 is formed on the whole surface of a P-clad layer 104 including the side face and the upper surface of a convexedly formed cap layer 105. SiO2 or Si3N4 may be used for an insulating film 107. An etching is performed in such a manner that the insulating film 107 will be left. Subsequently, a buried epitaxial growth is completed by performing an etching on the P-clad layer 104, an active layer 103 and an N-clad layer 102, and a buried type semiconductor layer is formed. |
| 公开日期 | 1984-12-14 |
| 申请日期 | 1983-06-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87144]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | SHIBATA ATSUSHI,NAKAO ICHIROU. Manufacture of compound semiconductor device. JP1984222936A. 1984-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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