Multiple light emission type laser diode array
文献类型：专利
| 作者 | HATTORI AKIRA; KAGAWA HITOSHI |
| 发表日期 | 1988-05-16 |
| 专利号 | JP1988111688A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multiple light emission type laser diode array |
| 英文摘要 | PURPOSE:To enable the individual modulation of an optical output from each light-emitting spot by the modulation of voltage by a construction wherein modulating electrodes for controlling a current injected into an active layer are provided in a current block layer corresponding to each stripe. CONSTITUTION:In a multiple light emission type laser diode array, modulating electrodes 13, 14 for controlling a current injected into an active layer are provided in a current block layer 1 corresponding to each of stripes 7, 8. While a forward bias voltage impressed between an anode and a cathode commonly for each array is set to be fixed, a bias voltage is impressed on the modulating electrodes 13, 14 provided in the current block layer corresponding to each array, so as to control the thickness of a depletion layer formed between the current block layer 1 and a lower clad layer 2 correspondingly to each array. By this control, the conductance of a path of a current injected into light- emitting regions 9, 10 of each array is modulated, and thereby an optical output from each light-emitting spot is modulated. |
| 公开日期 | 1988-05-16 |
| 申请日期 | 1986-10-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87150]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HATTORI AKIRA,KAGAWA HITOSHI. Multiple light emission type laser diode array. JP1988111688A. 1988-05-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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