Semiconductor laser
文献类型：专利
| 作者 | SAKAMOTO MASAMICHI |
| 发表日期 | 1988-02-17 |
| 专利号 | JP1988036591A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain an array type semiconductor laser, in which a threshold current value is decreased, a far field pattern is stabilized, manufacturing is simplified, reproducibility is improved and others are implemented, by providing a plurality of recesses and protrusions on a semiconductor substrate, making the widths of the recesses and the protrusions different, and making pitches between light emitting regions of an active layer approximately equal. CONSTITUTION:First and second clad layers 12 and 14, which have a large energy band gap, are formed on a semiconductor substrate 1 An active layer 13 having a small energy band gap is formed between the clad layers 12 and 14. Thus a double heterojunction type semiconductor laser is formed. A plurality of stripe-shaped recesses and protrudsions are formed on the semiconductor substrate 1 The relationship between a width Wa of a recess 15 and a width Wb of a protrusion 16 is made to be Wanot equal to Wb. Pitches d1, d2, d3. between the positions of step parts 17, which are to become light emitting regions, are made equal. Thus a desiragble light emitting state as the array type semiconductor laser can be obtained. The semiconductor laser characterized by small astigmatism, stabilized operation and a low threshold current value can be constituted. |
| 公开日期 | 1988-02-17 |
| 申请日期 | 1986-07-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87157]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | SAKAMOTO MASAMICHI. Semiconductor laser. JP1988036591A. 1988-02-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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