Divided electrode type semiconductor laser device
文献类型：专利
| 作者 | SUZUKI, YOSHIHIRO AGENCY OF IND.SCIENCE AND TECHN.; YAJIMA, HIROYOSHI AGENCY OF IND.SCIENCE AND TECHN.; SHIMADA, JUNICHI AGENCY OF IND.SCIENCE AND TECHN.; SHIMOYAMA, KENJI MITSUBISHI KASEI CORPORATION; GOTOH, HIDEKI MITSUBISHI KASEI CORPORATION |
| 发表日期 | 1991-05-02 |
| 专利号 | EP0370831A3 |
| 著作权人 | MITSUBISHI CHEMICAL CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Divided electrode type semiconductor laser device |
| 英文摘要 | To provide a divided electrode type semiconductor layer device designed to improve the separation of electrodes without reducing the amount of doping for carrier injection layers, a double-hetero-structure is formed on a semi-insulating substrate, and at least two pairs of carrier injection clad layers (109a, 109b; 111a, 111b) are thereafter buried like islands while a high-resistance portion (105) is left between the carrier injection clad layers to electrically separate these layers. Electrodes (113a,113b; 115a,115b) are respectively formed on the separated carrier injection layers (109a,109b; 111a,111b) |
| 公开日期 | 1991-05-02 |
| 申请日期 | 1989-11-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87164]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CHEMICAL CORPORATION |
| 推荐引用方式 GB/T 7714 | SUZUKI, YOSHIHIRO AGENCY OF IND.SCIENCE AND TECHN.,YAJIMA, HIROYOSHI AGENCY OF IND.SCIENCE AND TECHN.,SHIMADA, JUNICHI AGENCY OF IND.SCIENCE AND TECHN.,et al. Divided electrode type semiconductor laser device. EP0370831A3. 1991-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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