Optical register memory array
文献类型：专利
| 作者 | KUROKAWA TAKASHI; IKEDA MASAHIRO; TSUDA HIROYUKI |
| 发表日期 | 1989-09-27 |
| 专利号 | JP1989243292A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical register memory array |
| 英文摘要 | PURPOSE:To control write, storage, and readout times and to obtain output light with low distortion by providing gain control type laser diodes at the front or the rear side or both sides of a distribution feedback type or a Fabry-Perot type bistable semiconductor laser of multiple electrodes. CONSTITUTION:The waveguide layers 12' and the activating layers 13' of semiconductor lasers G and G' for optical gate and the waveguide layer 12 and the activating layer 13 of the distribution feedback type bistable semiconductor laser BL are connected optically at respective layers, and the laser BL is provided with a diffraction grating 15, and the waveguide layer and the activating layer are embedded by an embedding layer 14, and an electrode is attached, respectively, and a part between the electrodes is separated by grooves 16, 16' and 17, and antireflection films 19 and 19' are attached on an end part. When the large injection currents of the lasers G and G' flow, light transmits and arrives at the laser BL. The electrode EF of the laser BL is reset by permitting a current I1 to flow, and light Pin is made incident, and a current I3 is permitted to flow on the laser G, and emission light Pm is maintained, and readout is controlled by the injection current I4 of the laser G'. It is possible to control the write, storage, and readout times by the setting of a current impression time easily, and the distortion of the output light can be reduced in spite of the storage time. |
| 公开日期 | 1989-09-27 |
| 申请日期 | 1988-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87167]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | KUROKAWA TAKASHI,IKEDA MASAHIRO,TSUDA HIROYUKI. Optical register memory array. JP1989243292A. 1989-09-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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