Semiconductor laser device
文献类型：专利
| 作者 | TAKEMOTO, AKIRA; OMURA, ETSUJI |
| 发表日期 | 1993-07-13 |
| 专利号 | US5228048 |
| 著作权人 | KOKUSAI DENSHIN DENWA CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes a p type semiconductor substrate, an active layer having a smaller energy band gap than the p type semiconductor substrate and an n type semiconductor layer having a larger energy band gap than the active layer successively formed on the p type semiconductor substrate, a mesa formed by selectively etching the semiconductor substrate, active layer, and n type semiconductor layer, p-n-p layers having larger energy band gaps than the active layer and disposed at both sides of the mesa, a small energy band gap layer having a smaller energy band gap than the p type semiconductor substrate and disposed on the p-n-p layers, and an n type semiconductor layer disposed on the small energy band gap layer and on the n type semiconductor layer. The small energy band gap layers decrease the current flowing through the thyristor structure and are disposed close to the active region but in a different processing step from the formation of the active layer. A waveguide structure in which the active layer is surrounded by semiconductor layers having larger energy band gaps is realized. |
| 公开日期 | 1993-07-13 |
| 申请日期 | 1992-02-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87173]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO., LTD. |
| 推荐引用方式 GB/T 7714 | TAKEMOTO, AKIRA,OMURA, ETSUJI. Semiconductor laser device. US5228048. 1993-07-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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