半導体レ-ザ
文献类型：专利
| 作者 | 古谷 章 |
| 发表日期 | 1995-02-15 |
| 专利号 | JP1995014101B2 |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | PURPOSE:To enable to control the oscillating wavelength of a laser beam without consuming electric power by a method wherein a quantum well construction is furnished to an optical waveguide on a Bragg reflection mirror, and a reverse directional electric field to P-N junction of a semiconductor substrate is applied in the laminating direction of the construction thereof. CONSTITUTION:An active layer 4 (act as a waveguide together with a waveguide layer 3) is made to have a quantum well construction consisting of InGaAsP layers 4a, 4b of two kinds having different compositions. The semiconductor laser element thereof radiates a laser beam from the quantum well active layer 4 under a P-side electrode 10 according to injection of a current from the P-side electrode 10 and an N-side electrode 12, the active layer 4 thereof and the waveguide layer 3 act as the waveguide, and oscillating wave length is decided as usual according to an optical resonator constructed by a Bragg reflection according to a grating 7 and a reflection according to a cleavage plane 13, while the quantum well construction is contained in the waveguide thereof on the grating 7, and oscillating wave length can be controlled by applying a voltage being reverse to the N-side electrode 12 to a control electrode 11, and changing thereby the index of refraction thereof. |
| 公开日期 | 1995-02-15 |
| 申请日期 | 1986-02-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87175]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | 古谷 章. 半導体レ-ザ. JP1995014101B2. 1995-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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