Buried type semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | YAMAGUCHI AKIRA; INOUE TAKESHI; IRITA TAKESHI |
| 发表日期 | 1992-03-12 |
| 专利号 | JP1992079285A |
| 著作权人 | HIKARI KEISOKU GIJIYUTSU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To make a burying growth smoothly by using the plane of [110] as a growth stop plane. CONSTITUTION:An n-type buffer layer 2 or a p-type guide layer 5 is formed by crystal growth on a [100] n-type GaAs substrate 1 by the MOVPE technique. The layers form the p-type guide layer 5 to an n-type clad layer 3 are etched, thereby forming a mesa stripe in the direction of . In succession, a p-type clad first layer 6 and an n-type current block layer 7 are grown. At the same time with the growth of the p-type clad layer 6, a triangle-profiled layer 6' is formed on the top of the mesa stripe wherein the plane of [110] is defined as a growth stop plane. Further, the n-type current block layer 7 is formed by crystal growth on the regions other than the growth stop plane under the condition where the crystal growth is at a halt on the growth stop plane. Than, a p-type clad second layer 8 and a p-type cap layer 9 are adapted to growth on the triangle-profiled layer 6' and an n-type current block layer 7 where an electrode is mounted, which makes it possible to grow selectively a buried layer whose surface is smooth, using the growth stop on the crystal plane. |
| 公开日期 | 1992-03-12 |
| 申请日期 | 1990-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87181]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI KEISOKU GIJIYUTSU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | YAMAGUCHI AKIRA,INOUE TAKESHI,IRITA TAKESHI. Buried type semiconductor laser and manufacture thereof. JP1992079285A. 1992-03-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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