Semiconductor laser
文献类型：专利
| 作者 | OISHI AKIO; KURODA TAKARO; TSUJI SHINJI; HIRAO MOTONAO; MATSUMURA HIROYOSHI |
| 发表日期 | 1987-06-26 |
| 专利号 | JP1987143489A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To easily form a current blocking layer with sufficient controllability, in the deep part of crystal layer, by performing ion implantation in a buried- growth layer to form a current blocking layer after a mesa containing an active layer is buried with the same conduction type layer and is grown. CONSTITUTION:After an InGaAsP active layer and a P-type InP clad layer 6 are grown on an N-type InP substrate, a whole part is eliminated by etching, while the active layer of 0.5-2mum thick is left thereon. Then the whole part containing a mesa is buried with a P-type InP layer, and an InGaAsP cap layer is grown on its surface. Ion implantation of S, Se or Si is performed excepting the part to be a current path, and an N-type InP layer is formed by an annealing treatment. Comparing with a burying structure wherein a P-type layer and an N-type layer are selectively grown on the both sides of a mesa in the time of buried-growth, a current blocking layer can be easily formed thereby. It is also easily achieved to form an N-type layer in a P-type layer applying ion implantation. |
| 公开日期 | 1987-06-26 |
| 申请日期 | 1985-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87182]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OISHI AKIO,KURODA TAKARO,TSUJI SHINJI,et al. Semiconductor laser. JP1987143489A. 1987-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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