Semiconductor laser device
文献类型：专利
| 作者 | OBE ISAO; TODOROKI SATORU |
| 发表日期 | 1987-04-23 |
| 专利号 | JP1987089380A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To measure the real thickness of an active layer without breakdown by providing an intermediate layer whose band gap is larger than that of a semiconductor active layer and is smaller than those of first and second semiconductor light guiding layers between the first semiconductor light guiding layer and the semiconductor active layer, and between the second semiconductor light guiding layer and the semiconductor active layer. CONSTITUTION:On an N-type GaAs substrate 1, an N-type Ga1-xAlxAs layer 2 as a first light guiding layer, an N-type Ga1-yAlyAs layer 3 as a first intermediate layer, an N or P-type or undoped Ga1-zAlzAs active layer 4, a P-type Ga1-yAlyAs layer 5 as a second intermediate layer, a P-type Ga1-xAlxAs layer 6 as a second light guiding layer, and an N-type GaAs cap layer 7 are grown continuously by liquid or gas-phase epitaxy. Next, a Zn diffusion region 8 is formed from the surface of the N-type GaAs cap layer 7 to such depth that it reaches a part of the P-type Ga1-xAlxAs layer 6 as the second light guiding layer and an electrode 9 is arranged. In the above grown layers, x>y>z. |
| 公开日期 | 1987-04-23 |
| 申请日期 | 1985-10-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87185]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OBE ISAO,TODOROKI SATORU. Semiconductor laser device. JP1987089380A. 1987-04-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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