Semiconductor laser device and photoelectron device
文献类型：专利
| 作者 | KUSUNOKI HIRONORI; UEJIMA KENICHI; HIRASHIMA KENJI |
| 发表日期 | 1989-06-30 |
| 专利号 | JP1989166584A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and photoelectron device |
| 英文摘要 | PURPOSE:To reflect returning light of a laser beam in a desired direction without connection with a laser device and to reduce noises caused by the returning light, by providing a tilted reflecting surface on an edge of a substrate near a resonator edge side which emits a laser beam of a semiconductor laser device. CONSTITUTION:A current constriction laser 16 of n-type GaAs is formed on a main surface of a substrate 15 of p-type GaAs of a semiconductor laser device 1, and the layer thereof is divided with a striped groove 17 along the center line. A p-type clad layer 18, an active layer 19, an n-type clad layer 20 and a cap layer 21 are formed one by one on the layer 16 and the exposed substrate 15. A resonator 24 is formed opposite to the layer 19 and the groove 17. The resonator edge side 3 is exposed at an edge side 2 of the device 1 then a laser beam 4 is emitted from the edge side. A reflecting surface 12 tilting against the edge side 2 which reflects returning light 5 of the laser beam 4 partially to the rear of the substrate 15 which is opposite to the groove 17. The reflecting surface 12 is provided on the substrate 15 which is spaced by a predetermined distance from the resonator 24 and a sub beam 8 is set at a predetermined space. |
| 公开日期 | 1989-06-30 |
| 申请日期 | 1987-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87190]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KUSUNOKI HIRONORI,UEJIMA KENICHI,HIRASHIMA KENJI. Semiconductor laser device and photoelectron device. JP1989166584A. 1989-06-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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