Semiconductor laser device
文献类型：专利
| 作者 | HIRONAKA MISAO |
| 发表日期 | 1992-09-17 |
| 专利号 | JP1992261082A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To minimize the dispersion in thickness by a method wherein GaAs and AlGaAs are selectively etched away using two kinds of etchants during the ridge formation step. CONSTITUTION:A contact layer 15 is repeatedly etched away using ammonium base etchant. Furthermore, an upper clad layer 4 is etched using a tartaric acid base etchant and then the upper clad layer 4 and an active layer 3 are completely etched away to form a ridge 5. Finally, a lower clad layer 2 is exposed as if the etched away region is buried by etched step using the MOCVD step etc., and then after the epitaxial deposition of a buffer layer 6 and a current block layer 7, a dielectric film 30 is removed to deposit a cap layer 8 again. |
| 公开日期 | 1992-09-17 |
| 申请日期 | 1991-02-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87192]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HIRONAKA MISAO. Semiconductor laser device. JP1992261082A. 1992-09-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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