Manufacture of multiple wavelength integrated semiconductor laser
文献类型：专利
| 作者 | SHIMADA KATSUTO |
| 发表日期 | 1990-02-02 |
| 专利号 | JP1990032584A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of multiple wavelength integrated semiconductor laser |
| 英文摘要 | PURPOSE:To manufacture a multiple wavelength integrated semiconductor laser having different oscillation wavelengths with a simple process by causing the thicknesses of well layers comprised in quantum well layers to vary between respective semiconductor elements after irradiating with rays having some degrees of intensity which are different in the form of stripes like shape. CONSTITUTION:An n-type GaAs buffer layer 102, an n-type AlGaAs clad layer 103 are formed on an n-type GaAs substrate 101 one after another. Subsequently, active layers 104, 114 and 124 are formed in a quantum well while irradiating the substrate 101 with laser and they are formed simultaneously with a filter mask 105 in which some degrees of transmission intensity of the laser vary periodically in the form of stripes like shape. Then, a p-type AlGaAs upper side clad layer 106, a p-type GaAs contact layer 107 are formed one after another on active layers. This manufacturing technique makes its process simple and prevents contamination of crystals without necessitating a photolithographical process which is required in the case of manufacturing a diffraction grating, and then, favorable laser characteristics are obtained. |
| 公开日期 | 1990-02-02 |
| 申请日期 | 1988-07-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87195]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | SHIMADA KATSUTO. Manufacture of multiple wavelength integrated semiconductor laser. JP1990032584A. 1990-02-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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