Semiconductor optical element
文献类型：专利
| 作者 | DEIBITSUTO JIEI NIYUUSON; KUROBE ATSUSHI |
| 发表日期 | 1989-04-20 |
| 专利号 | JP1989102437A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical element |
| 英文摘要 | PURPOSE:To attain very high speed operation by setting up a space confining width of a wave function of a base sub-hand in sub-hands to a value narrower than that of wave function of other sub-hands. CONSTITUTION:Step type quantizing wells 104-106 are formed by thin film forming technique and layers 103, 107 are formed to confine light. A layer 105 is GaAs layer with 40Angstrom width, layers 104, 106 are Al0.26Ga0.74As layers with 80Angstrom width, layers 103, 107 are Al0.5Ga0.5 layers and layers 102, 108 are Al0.26Ga0.8As clad layers. An n-type impurity is dooped on a part of the layers 103, 107 as layers 103a, 107a. The layers 103a, 107a are separated from the layer 105 by 180Angstrom and dooped as an n-type up to 5X10cm impurity level with 100Angstrom width. Incident light is parallel with hetero interference and has a polarization component in a direction vertical to the hetero interference. A light input end face and a light output end face are formed by cleavages to constitute a Fabry-Perot resonator. |
| 公开日期 | 1989-04-20 |
| 申请日期 | 1987-10-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87200]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | DEIBITSUTO JIEI NIYUUSON,KUROBE ATSUSHI. Semiconductor optical element. JP1989102437A. 1989-04-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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