Semiconductor laser device
文献类型：专利
| 作者 | NAKATSUKA, SHIN'ICHI; OHTOSHI, TSUKURU; SHINODA, KAZUNORI; TERANO, AKIHISA; NAKAMURA, HITOSHI; TANAKA, SHIGEHISA |
| 发表日期 | 2007-05-31 |
| 专利号 | US20070121693A1 |
| 著作权人 | USHIO OPTO SEMICONDUCTORS, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A super-lattice structure is used for a portion of a laser device of a self-aligned structure to lower the resistance of the device by utilizing the extension of electric current in the layer, paying attention to the fact that the lateral conduction of high density doping in the super-lattice structure is effective for decreasing the resistance of the laser, in order to lower the operation voltage and increase the power in nitride type wide gap semiconductor devices in which crystals with high carrier density are difficult to obtain and the device resistance is high. |
| 公开日期 | 2007-05-31 |
| 申请日期 | 2006-11-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87204]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | USHIO OPTO SEMICONDUCTORS, INC. |
| 推荐引用方式 GB/T 7714 | NAKATSUKA, SHIN'ICHI,OHTOSHI, TSUKURU,SHINODA, KAZUNORI,et al. Semiconductor laser device. US20070121693A1. 2007-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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