Optical semiconductor integrated device
文献类型：专利
| 作者 | MATSUEDA HIDEAKI; FUKUZAWA TADASHI |
| 发表日期 | 1988-03-22 |
| 专利号 | JP1988064384A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor integrated device |
| 英文摘要 | PURPOSE:To manufacture a wavelength multiple semiconductor laser having sufficient wavelength intervals and wide wavelength selectivity by using a quantum well for an active layer and changing the thickness of the well layer. CONSTITUTION:Inclined planes, angles of which with the base of a substrate are respectively 20 deg., 30 deg. and 40 deg., are formed to the substrate. Epitaxial layers are grown onto the obtained substrate in succession. A slit in width of 5mum is shaped to one part of an N-type GaAs layer. A P-type Ga0.55Al0.45As clad layer 5 and a P-type GaAs cap layer 6 are grown. P side electrodes 7 are formed through the evaporation of a metal and a lift-off method. A metal is evaporated onto the rear to shape an N side electrode 9. As the last stop, a laser cavity is formed by cleavage, and the whole is separated into each chip through scribing. Accordingly, a wavelength multiple semiconductor laser having sufficient wavelength intervals and wide wavelength selectivity is manufactured. |
| 公开日期 | 1988-03-22 |
| 申请日期 | 1986-09-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87205]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | MATSUEDA HIDEAKI,FUKUZAWA TADASHI. Optical semiconductor integrated device. JP1988064384A. 1988-03-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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