Semiconductor device and manufacture of the same
文献类型：专利
| 作者 | HIRAYAMA YOSHIO; OKAMOTO HIROSHI |
| 发表日期 | 1987-06-12 |
| 专利号 | JP1987130521A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and manufacture of the same |
| 英文摘要 | PURPOSE:To obtain a semiconductor device by ion implantation of elements of compound semiconductor, forming a fine and stable high-resistance region to a part thereof and combining it with epitaxial growth. CONSTITUTION:The n-GaAs 2 is formed epitaxially by the MBE method on a half-insulated GaAs substrate 1, the layer 2 and the substrate 1 are etched to narrow the width of center region. The Ga ion implanted region is formed in such a depth as reaching the substrate 1 at the center of narrow region by the focused ion beam in diameter of 0.1mum. The dose amount is 3-5X10cm. The annealing is then carried out in the H2 ambience. As a result, the pi layer of high specific resistance is formed in the width of 0.1mum, the equivalent resistance between electrodes 21, 22 by n-pi-n exceeds 2X10OMEGA and thereby the epitaxial layer 2 is insulated and isolated. This phenomenon also generates high specific resistance layer even in case the Ga ion is implanted to the hybrid semiconductor crystal formed on the basis of GaAlAsXGaAs. Ga is stable in the crystal because it is an element and does not give any influence on the characteristics, unlike the impurity. A semiconductor device by a new structure can be obtained by making use of a local high resistance. |
| 公开日期 | 1987-06-12 |
| 申请日期 | 1985-12-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87206]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | HIRAYAMA YOSHIO,OKAMOTO HIROSHI. Semiconductor device and manufacture of the same. JP1987130521A. 1987-06-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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