Ridge-type semiconductor laser element fabrication method
文献类型:专利
| 作者 | KIMURA, TAKASHI |
| 发表日期 | 2005-04-21 |
| 专利号 | US20050084997A1 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Ridge-type semiconductor laser element fabrication method |
| 英文摘要 | The present invention provides a ridge-type semiconductor laser devise comprising: a lower cladding layer of a first conductivity type, an active layer, and a first upper cladding layer of a second conductivity type, which are sequentially stacked on a compound semiconductor substrate of the first conductivity type; a second upper cladding layer of the second conductivity type which has a ridge shape and is provided on the first upper cladding layer; and a contact layer of the second conductivity type provided on the second upper cladding layer. Current blocking layers are provided on the first upper cladding layer, alongside the second upper cladding layer. Respective sections of these current blocking layers that follow the sides of the second upper cladding layer are of the second conductivity type, and respective sections of these current blocking layers that follow the first upper cladding layer are of the first conductivity type. |
| 公开日期 | 2005-04-21 |
| 申请日期 | 2004-10-25 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87209] ![]() |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | KIMURA, TAKASHI. Ridge-type semiconductor laser element fabrication method. US20050084997A1. 2005-04-21. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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