中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Ridge-type semiconductor laser element fabrication method

文献类型:专利

作者KIMURA, TAKASHI
发表日期2005-04-21
专利号US20050084997A1
著作权人ROHM CO., LTD.
国家美国
文献子类发明申请
其他题名Ridge-type semiconductor laser element fabrication method
英文摘要The present invention provides a ridge-type semiconductor laser devise comprising: a lower cladding layer of a first conductivity type, an active layer, and a first upper cladding layer of a second conductivity type, which are sequentially stacked on a compound semiconductor substrate of the first conductivity type; a second upper cladding layer of the second conductivity type which has a ridge shape and is provided on the first upper cladding layer; and a contact layer of the second conductivity type provided on the second upper cladding layer. Current blocking layers are provided on the first upper cladding layer, alongside the second upper cladding layer. Respective sections of these current blocking layers that follow the sides of the second upper cladding layer are of the second conductivity type, and respective sections of these current blocking layers that follow the first upper cladding layer are of the first conductivity type.
公开日期2005-04-21
申请日期2004-10-25
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/87209]  
专题半导体激光器专利数据库
作者单位ROHM CO., LTD.
推荐引用方式
GB/T 7714
KIMURA, TAKASHI. Ridge-type semiconductor laser element fabrication method. US20050084997A1. 2005-04-21.

入库方式: OAI收割

来源:西安光学精密机械研究所

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