Manufacture of semiconductor device
文献类型：专利
| 作者 | NAKAI KENYA |
| 发表日期 | 1988-11-22 |
| 专利号 | JP1988284877A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To reduce a leakage current and improve the light emission efficiency by forming a mesa part through a mesa etching and by causing a crystal layer in which the mesa part is embedded to grow. CONSTITUTION:A protecting mask 10 is mounted on a semiconductor substrate 1 and an etching is carried out so that a lower layer coated with the protecting film mask 10 may remains in a mesa part having a prescribed height and further, an inclined plane B having prescribed crystal planes at base end planes of the mesa part is formed and simultaneously, eaves having a prescribed width are formed at the protecting film mask 10 by etching the sides of mesa. And then, semiconductor crystal layers 19 grow so as to embed the mesa part and make the surface flat. In this way, even though this device makes the height of the mesa part higher, the semiconductor layer for embedding the mesa part grows satisfactorily and a leakage current decreases and further other excellence is obtained. Thus, the above properties improve the performance of the semiconductor device. |
| 公开日期 | 1988-11-22 |
| 申请日期 | 1987-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87217]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NAKAI KENYA. Manufacture of semiconductor device. JP1988284877A. 1988-11-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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