Semiconductor laser
文献类型：专利
| 作者 | IKEDA KENJI; HIUGA SUSUMU |
| 发表日期 | 1987-04-08 |
| 专利号 | JP1987076583A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain fundamental single mode oscillation stably even in a high optical output region, and to increase an output from a single mode oscillation laser by constituting an active region (a striped section) of a section having a refractive index sufficiently higher than reluctant partial index variation and a section having a refractive index lower than the variation. CONSTITUTION:In an index waveguide type semiconductor laser, regions consisting of three pairs or more of high index sections and low index sections along the longitudinal direction of a stripe are each formed into one striped region, and the mean equivalent refractive index of the striped section is higher than the equivalent refractive indices of regions adjacent to both sides of the striped section, and differences among them are brought to a small value where there is only one propagating transverse mode permissible in the three regions. The laser is shaped in such a manner that a P-AlxGa1-xAs layer 2, a P-GaAs layer 4 and a P-AlyCa1-yAs layer 11 are grown continuously onto an N-GaAs substrate 1 in an epitaxial manner and parallel fine lines having a period of 4mum are drawn onto a resist by using an interference exposure method, developed and etched selectively in approximately 0.3m. |
| 公开日期 | 1987-04-08 |
| 申请日期 | 1985-09-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87221]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | IKEDA KENJI,HIUGA SUSUMU. Semiconductor laser. JP1987076583A. 1987-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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