Optical bistable semiconductor laser
文献类型：专利
| 作者 | SANADA TATSUYUKI |
| 发表日期 | 1989-08-31 |
| 专利号 | JP1989217989A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical bistable semiconductor laser |
| 英文摘要 | PURPOSE:To prevent incident light to be incorporated in emitted light, by providing a plurality of through holes in at least one of upper and lower electrodes over a stripe active layer so that incident light is applied to an active layer through these through holes. CONSTITUTION:On an N-type InP substrate 31, there are formed an N-type InP clad layer 32, an InGaAsP active layer 33, a P-type InP clad layer 34, a P-type InGaAsP contact layer 35 and a semiinsulating InP buried layer 36 having high resistance. Under the substrate 31, there are provided an N electrode 37 and a bonding metallic layer 38. An SiO2 insulating layer 39 is formed on the buried layer 36. A P electrode 40 and a bonding metallic layer 41 are formed on the layer 30 as well as on the exposed region of the buried layer 36 and contact layer 35. The metallic layer 41 and the P electrode 40 have a plurality of through holes (windows) 42 so that incident light C vertical to the P electrode 40 is applied to the active layer 33 through these through holes 42. |
| 公开日期 | 1989-08-31 |
| 申请日期 | 1988-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87222]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SANADA TATSUYUKI. Optical bistable semiconductor laser. JP1989217989A. 1989-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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