A semiconductor light-emitting device
文献类型：专利
| 作者 | STEWART, EDWARD, HOOPER; VALERIE, BOUSQUET; JONATHAN, HEFFERNAN |
| 发表日期 | 2006-11-01 |
| 专利号 | GB2425652A |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | A semiconductor light-emitting device |
| 英文摘要 | A semiconductor light-emitting device fabricated in a nitride material system and comprises an active region 10 for light emission and an electron gas region 13 disposed on the n-type side of the active region. In operation of the device, electrons accumulate in the electron gas region 13 and form an electron gas. The electron gas provides a region of highly concentrated electron charge at or near the n-side boundary of the active region 10, and acts as an electron reservoir to supply carriers into the active region 10. Provision of the electron gas region 13 in the device thus improves the injection of electrons into the active region 10 of the device, thereby improving the optical efficiency. |
| 公开日期 | 2006-11-01 |
| 申请日期 | 2005-04-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87226]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | STEWART, EDWARD, HOOPER,VALERIE, BOUSQUET,JONATHAN, HEFFERNAN. A semiconductor light-emitting device. GB2425652A. 2006-11-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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