Visible light semiconductor laser
文献类型：专利
| 作者 | NISHIDA KATSUHIKO |
| 发表日期 | 1984-05-18 |
| 专利号 | JP1984086281A |
| 著作权人 | KOGYO GIJUTSUIN (JAPAN) |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Visible light semiconductor laser |
| 英文摘要 | PURPOSE:To obtain an oscillation of a semiconductor laser in a short wavelength with a long lifetime by forming semiconductor layers in multilayer states as clad layer and active layer of a crystal which is formed of three or more elements of Al, Ga, In, As and P on an alloy substrate formed of Si and Ge. CONSTITUTION:An N type AlInP layer 2, an N type GaInP layer 3, a P type AlInP layer 4, an SiO2 film 5 and electrodes 6, 7 are formed on an N type SiGe substrates These epitaxial layers are formed by evaporating Al, In, Ga metals and phosphorus, and growing by a known molecular beam epitaxial method for depositioning on a substrate. The thickness of the layer 3 is grown in a thickness of approx. 0.1mum and clad layers 2, 4 of approx. 2mum, thereby forming a laser which has low oscillation threshold value. The formations of an N type layer and a P type layer can be doped during growing by using a molecular beam of Zn or Be. The prescribed mixed crystal ratio can be obtained by controlling gas component ratio similarly to the molecular beam method. |
| 公开日期 | 1984-05-18 |
| 申请日期 | 1982-11-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87227]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN (JAPAN) |
| 推荐引用方式 GB/T 7714 | NISHIDA KATSUHIKO. Visible light semiconductor laser. JP1984086281A. 1984-05-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。