Semiconductor laser diode and its manufacture
文献类型：专利
| 作者 | MIYAZAWA TAKEO; MIKAMI OSAMU; NAGANUMA MITSURU |
| 发表日期 | 1989-09-25 |
| 专利号 | JP1989239984A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode and its manufacture |
| 英文摘要 | PURPOSE:To form a double heterostructure and a buried layer at the same time by a method wherein a polycrystalline semiconductor layer and an epitaxial semiconductor layer are formed individually on a first and second regions where epitaxial growth is hard to execute and can be executed. CONSTITUTION:An SiO2 film 11 is deposited on an Si-doped GaAs substrate; this film is etched to be a stripe shape and removed. A quantum well laser structure 12 is made on this substrate by an MBE method. By the MBE growth method, the laser structure 12 is made in a part where the SiO2 film 11 has been removed and polycrystal is formed on SiO2. A laser structure is composed of the following as enumerated from the side of the substrate: an Si-doped GaAs buffer layer 14; an Si-doped Al0.4Ga0.6As clad layer 15; an undoped Al0.15 Ga0.85As optical waveguide layer 17; an undoped GaAs/Al0.15Ga0.85As multi- quantum well active layer 16; the undoped Al0.15Ga0.85As optical waveguide layer 17; a Ba-doped Al0.4Ga0.6As clad layer 18; a Be-doped cap layer 19. A Cr-Au p-contact 20 and an AuGeNi n-contact 21 are formed; a specimen is cleaved; and an end face is formed. |
| 公开日期 | 1989-09-25 |
| 申请日期 | 1988-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87231]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | MIYAZAWA TAKEO,MIKAMI OSAMU,NAGANUMA MITSURU. Semiconductor laser diode and its manufacture. JP1989239984A. 1989-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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