Semiconductor laser device
文献类型：专利
| 作者 | MATSUEDA HIDEAKI; TANAKA KATSUKI |
| 发表日期 | 1985-08-22 |
| 专利号 | JP1985160681A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain an end-surface etching laser having high efficiency by forming a nonlinear type substance layer generating a phase conjugate wave to one reflective surface of an optical resonator. CONSTITUTION:Double hetero-laser layers consisting of an Sn doped GaAs conductive layer 15, a GaAlAs clad layer 14, a GaAlAs active layer 13, a GaAlAs clad layer 12 and a GaAs cap layer 11 are grown on a semi-insulating GaAs substrate 1, the substrate 1 is exposed through etching, and ions are implanted and an electronic circuit 16 is formed. A recessed section 9 is shaped by the etching of phosphoric acid, a hydrogen peroxide solution and an ethylene glycol solution while using a photo-resist as a mask in order to form a refective surface in an element for a laser. A nonlinear substance 9 is attached in the recessed section 9, an electrode 17 is shaped, and a wafer is cloven and divided into several chip while another laser end surface 6 for extracting beams to the outside is formed. In a laser, an obtained one surface thereof consists of the etched end surface 6, efficiency the same as or higher than a laser, both surfaces thereof are cloven, is obtained by injection-exciting a main laser 3 and a pumping laser 2 in an approximately the same extent. |
| 公开日期 | 1985-08-22 |
| 申请日期 | 1984-02-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87235]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | MATSUEDA HIDEAKI,TANAKA KATSUKI. Semiconductor laser device. JP1985160681A. 1985-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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