Semiconductor laser
文献类型：专利
| 作者 | OOTA YOICHIRO; YAGI TETSUYA |
| 发表日期 | 1988-02-25 |
| 专利号 | JP1988044786A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device where epitaxial layers as well as an insulating film that serves as an electric current bottleneck layer are continuously formed in the same device by using chalcogen compounds, with the exception of oxide among others, as the insulating film that serves as the current bottleneck layer. CONSTITUTION:If epitaxial layers 2-4 are formed on a substrate 1 and an electric current bottleneck layer 5 using insulating materials of chalcogen compounds such as As-Se series glasses and the like is prepared on the above layers 2-4, a current injected by electrodes 6 and 7 is concentrated on a groove part 8 of the current bottleneck layer 5 and even at an active layer 3, the current is concentrated on a place near the groove part and its part permits the current to flow. In the case of manufacturing a semiconductor laser through an epitaxal crystal growth, metals such as arsenic, gallium or zinc and the like as well as substances including a group chalcogen elements such as sulfur, selenium, tellurium and the like are used as principal components or dopants in the majority of cases. Yet, after having performed epitaxial growths such as GaAs and so on, it is easy for the chalcogen compounds such as As-Se series to be continuously formed on the epitaxial layer in the same device. |
| 公开日期 | 1988-02-25 |
| 申请日期 | 1986-08-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87239]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OOTA YOICHIRO,YAGI TETSUYA. Semiconductor laser. JP1988044786A. 1988-02-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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