Photosemiconductor element
文献类型：专利
| 作者 | ISHIKURA TAKURO |
| 发表日期 | 1987-02-20 |
| 专利号 | JP1987039085A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photosemiconductor element |
| 英文摘要 | PURPOSE:To form a thin current constriction layer regardless of the conductive type of a substrate by using the Ga1-xAlxAs which has increased in resistance been made the resistance higher as a current constriction layer. CONSTITUTION:A semiconductor substrate 20 is formed by laminating a non- doped GaAs layer 22. A Ga1-xAlxAs layer 23, and a non-doped GaAs layer 24 on an N-type GaAs substrate 21 by organic metal chemical vapor deposition technique. A groove 25 is formed on the semiconductor substrate 20 and N-type GaAlAs cladding layer 26, a P-type GaAlAs active layer 27, a P-type GaAlAs cladding layer 28, and a P-type GaAs cap layer 29 are laminated by liquid-phase growth technique. After thus forming an electrode, that is separated into elements to obtain the semiconductor laser element 30 comprising a high- resistance GaAlAs layer 23 as a current constriction layer on the N-type GaAs substrate 2 |
| 公开日期 | 1987-02-20 |
| 申请日期 | 1985-08-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87247]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | ISHIKURA TAKURO. Photosemiconductor element. JP1987039085A. 1987-02-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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