Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
文献类型：专利
| 作者 | KNEISSL, MICHAEL A. |
| 发表日期 | 2006-06-15 |
| 专利号 | US20060126688A1 |
| 著作权人 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure |
| 英文摘要 | A novel indium gallium nitride laser diode is described. The laser uses indium in either the waveguide layers and/or the cladding layers. It has been found that InGaN waveguide or cladding layers enhance optical confinement with very small losses. Furthermore, the use of InGaN waveguide or cladding layers can improve the structural integrity of active region epilayers because of reduced lattice mismatch between waveguide layers and the active region. |
| 公开日期 | 2006-06-15 |
| 申请日期 | 2005-10-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87251]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 推荐引用方式 GB/T 7714 | KNEISSL, MICHAEL A.. Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure. US20060126688A1. 2006-06-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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