Manufacture of surface light-emitting semiconductor element
文献类型：专利
| 作者 | KASUKAWA AKIHIKO; IMASHIYOU YOSHIHIRO |
| 发表日期 | 1992-02-24 |
| 专利号 | JP1992056182A |
| 著作权人 | HIKARI GIJIYUTSU KENKIYUU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of surface light-emitting semiconductor element |
| 英文摘要 | PURPOSE:To enable a title item to be formed in nearly circular form and its surface to be formed flat and characteristics of each element to be uniform when forming a plurality of surface light-emitting semiconductor laser elements by using a specific mixed etching liquid as a solution for etching a layer which is subjected to epitaxial growth in a circular mesa shape. CONSTITUTION:An etching mask 7 according to a circular SiO2 whose diameter is 10mum is formed on a clad layer 6. Then, etching is provided using a mixed etching liquid which is obtained by mixing hydrochloric acid, acetic acid, and hydrogen peroxide water in a ratio of 1:2:1 (volume ratio) from a main surface of the layer 6 where no mask 7 is provided to a depth reaching a specified position of an activation layer 5. Then, selective etching is provided using an etching liquid obtained by mixing sulfuric acid, water, and hydrogen peroxide water in a ratio of 3:1:1 (volume ratio) from a specified position of a layer 5 to a clad layer 4, thus forming a circular mesa whose diameter is 10mum, thus forming a nearly circular element and a flat surface and enabling characteristics of each element to be uniform when forming a plurality of face light-emitting semiconductor laser elements. |
| 公开日期 | 1992-02-24 |
| 申请日期 | 1990-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87253]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI GIJIYUTSU KENKIYUU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | KASUKAWA AKIHIKO,IMASHIYOU YOSHIHIRO. Manufacture of surface light-emitting semiconductor element. JP1992056182A. 1992-02-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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