半導体発光装置
文献类型：专利
| 作者 | 棚橋 俊之 |
| 发表日期 | 1995-10-11 |
| 专利号 | JP1995095616B2 |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光装置 |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser characterized by a low thresholdvalue current, high efficiency and excellent high frequency characteristics, by providing a p-InP substrate, a laminated mesa stripe part a p-InP layer, an InGaAsP active layer and an n-InP layer on the p-InP substrate, a high resistance InP layer filling both sides of the mesa stripe part, and a second n-InP layer on the high resistance InP layer and the n-InP layer, thereby reducing a junction capacitance. CONSTITUTION:On the entire surface of a p-InP (100) substrate 21, a p-InP layer 22, an InGaAsP active layer 23 and an n-InP layer 24 are continuously grown by a liquid phase epitaxial method. Then an SiO2 stripe mask 29 having a specified width is formed in the direction of on the n-InP layer 24. The layers 24-22 are etched, to form a mesa stripe part 25. Then a high resistance InP layer 26 is grown so as to fill both sides of the mesa stripe part 25 by a liquid phase epitaxial growing method. Then the SiO2 mask 29 is removed with ammonium fluoride liquid. Then, an n-InP layer 27 and an N-InGaAsP layer 28 are continuously grown on the high resistance InP layer 26 and the N-InP layer 24 by the third liquid phase epitaxial growing. Thereafter, a P electrode is formed on the substrate 21, and an n electrode is formed on the n-InGaAsP cap layer 28, Then the device is cleaved. |
| 公开日期 | 1995-10-11 |
| 申请日期 | 1986-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87258]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | 棚橋 俊之. 半導体発光装置. JP1995095616B2. 1995-10-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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