Article comprising a semiconductor waveguide structure
文献类型：专利
| 作者 | CAPASSO, FREDERICO; CHO, ALFRED YI; FAIST, JEROME; HUTCHINSON, ALBERT LEE; SIRTORI, CARLO; SIVCO, DEBORAH LEE |
| 发表日期 | 1996-11-27 |
| 专利号 | EP0744801A1 |
| 著作权人 | AT&T IPM CORP. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Article comprising a semiconductor waveguide structure |
| 英文摘要 | Articles according to the invention include a semiconductor waveguide having a core (11, 12, 13) and a cladding (e.g., 14, 15, 16), with the cladding including doped semiconductor material (17). The doping level is selected such that both the real part n and the imaginary part k of the complex refractive index of the doped material are relatively low, exemplarily n < 0.5 ε ½∞ and k < 1, where ε∞ is the high frequency lattice dielectric constant of the material. Appropriate choice of the doping level can result in improved confinement of the guided radiation without undue increase in the attenuation of the guided radiation. The invention exemplarily is embodied in a long wavelength (∼8.5µm) quantum cascade laser. Other embodiments are contemplated. |
| 公开日期 | 1996-11-27 |
| 申请日期 | 1996-05-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87259]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T IPM CORP. |
| 推荐引用方式 GB/T 7714 | CAPASSO, FREDERICO,CHO, ALFRED YI,FAIST, JEROME,et al. Article comprising a semiconductor waveguide structure. EP0744801A1. 1996-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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