Method for measuring thickness of epitaxial wafer layer
文献类型：专利
| 作者 | TANAKA AKIRA; KONNO KUNIAKI; MATSUYAMA TAKAYUKI |
| 发表日期 | 1987-04-04 |
| 专利号 | JP1987073617A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for measuring thickness of epitaxial wafer layer |
| 英文摘要 | PURPOSE:To obtain a method to accurately and simply measure the thickness of epitaxial growth layer by cutting a sample in the direction crossing the cutting cross-section after the etching and measuring the thickness of a specified semiconductor layer on the cross-section. CONSTITUTION:A sample 20 is cut out with a scriber along the line A-A at the position sufficiently distant from the abnormal growth section on the end of an eptaxial wafer 10 and etched for a few minutes-10min in a mixture solution of potassium hexacyanoferrate, potasium hydroxide, and water. In this etching, the epitaxial wafer 10 is etched in the direction of depth y of a semiconductor layer 16 and also substancially etched in the direction of x of adjacent semiconductor layers 14 and 18. The sample is cut in the direction crossing the cutting cross-section 22 after the etching, and the cut surface 24 is observed with a scaning type electron microscope to measure the etching width C at the deep section of a groove 26 formed with the etching, thereby providing simpler and accurate measuring of the thickness of an epitaxial wafer. |
| 公开日期 | 1987-04-04 |
| 申请日期 | 1985-09-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87263]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | TANAKA AKIRA,KONNO KUNIAKI,MATSUYAMA TAKAYUKI. Method for measuring thickness of epitaxial wafer layer. JP1987073617A. 1987-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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