Radiation-emitting semiconductor diode, and method of manufacturing such a diode
文献类型：专利
| 作者 | DE POORTER, JOHANNES, ANTONIUS; VALSTER, ADRIAN; BROUWER, ARNOUD, ADRIANUS |
| 发表日期 | 1998-06-10 |
| 专利号 | EP0846342A1 |
| 著作权人 | PHILIPS ELECTRONICS N.V. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Radiation-emitting semiconductor diode, and method of manufacturing such a diode |
| 英文摘要 | A radiation-emitting semiconductor diode with a substrate (1) on which are situated: a first cladding layer (2), an active layer (3), and a second cladding layer (4), forms an important component in information-processing systems such as optical disc systems, especially when constructed as a laser. A laser in the GaInP/AlGaInP material system has a desired short-wave emission of, for example, 630 nm. According to the invention, such a diode comprises a barrier layer (9) which is present between the second cladding layer (4) and the active layer (3) and which prevents dopant elements, for example zinc atoms, from moving from the second cladding layer (4) to the active layer (3). The degradation which would otherwise occur was found to be connected with a local displacement of the pn junction from the second cladding layer owing to the stress in the layer structure which is necessary for the photoelastic effect. The barrier layer (9) preferably comprises two or more sub-layers (9A, 9B) with alternately a high and a low bandgap, in the GaInP/AlGaInP material system made of AlGaInP or AlInP with alternately a high and a low aluminum content. Such a barrier layer at the same time increases the efficiency of the diode according to the invention. In a major embodiment, the doping profile has a stepped gradient on either side of the active layer (3). |
| 公开日期 | 1998-06-10 |
| 申请日期 | 1997-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87264]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PHILIPS ELECTRONICS N.V. |
| 推荐引用方式 GB/T 7714 | DE POORTER, JOHANNES, ANTONIUS,VALSTER, ADRIAN,BROUWER, ARNOUD, ADRIANUS. Radiation-emitting semiconductor diode, and method of manufacturing such a diode. EP0846342A1. 1998-06-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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