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文献类型：专利
| 作者 | SAKAI KAZUO; AKIBA SHIGEYUKI; MATSUSHIMA JUICHI; YAMAMOTO AKINARI |
| 发表日期 | 1987-02-04 |
| 专利号 | JP1987005330B2 |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To epitaxially and bidimensionally grow layers of different compositions on an identical plane at liquid phase, by utilizing the difference between the speeds of dissolution of semiconductors of different compositions into a metal solution to produce a mask of a thin semiconductor film and using the mask to perform etching and crystal growth. CONSTITUTION:An n-type InP layer 2, an In1-sGasAst-1P1-t layer 3 (0.42t<=s<= 0.50t, 0.58<=t<=0.65), a p-type InP layer 4, an n-type In1-vGavAswP1-w layer 5 (0.42w<=v<=0.50w, 0.7<=w<=1) and an n-type In1-xGaxAsyP1-y layer 9 (0.42<= x<=0.50y, O<=y<=0.65) are sequentially grown on an n-type InP substrate The central part of the layer 9 is removed by photolithography and chemical etching to provide a recess. The exposed part of the layer 5 is removed by using a solution in which the liquid-phase P concentration in an In solvent is about 0.55% by atom. After that, an In1-pGapAsaP1-a layer 6 (0.42a<=p<=0.50Q) is grown on the entire surface. At that time, the forbidden band widths Eg5, Eg3, Eg6 of the layers 5, 3, 6 are prescribed as Eg5 |
| 公开日期 | 1987-02-04 |
| 申请日期 | 1979-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87267]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | SAKAI KAZUO,AKIBA SHIGEYUKI,MATSUSHIMA JUICHI,et al. -. JP1987005330B2. 1987-02-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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